switching diodes 1 publication date: july 2002 skf00063aed ma3x100 (MA10100) silicon epitaxial planar type for switching circuits features ? high breakdown voltage: v r = 200 v ? small terminal capacitance absolute maximum ratings t a = 25 c 0.3 2.0 0.2 1.3 0.1 (0.65) 1 3 2 (0.65) 0.9 0.1 2.1 0.1 1.25 0.1 0 to 0.1 (0.15) (0.425) 5? 5? +0.1 ? 0.15 +0.1 ?.05 unit: mm 1: anode 2: n.c. 3: cathode smini3-f1 package marking symbol: m3a internal connection parameter symbol rating unit reverse voltage (dc) v r 200 v repetitive peak reverse voltage v rrm 250 v average forward current i f(av) 100 ma repetitive peak forward current i frm 225 ma non-repetitive peak forward- i fsm 500 ma surge-current * junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) * :t = 1 s 3 2 1 parameter symbol conditions min typ max unit reverse current (dc) i r v r = 200 v 1.0 a forward voltage (dc) v f i f = 100 ma 1.2 v terminal capacitance c t v r = 0 v, f = 1 mhz 3.0 pf reverse recovery time * t rr i f = i r = 10 ma 60 ns i rr = 1 ma , r l = 100 ? electrical characteristics t a = 25 c 3 c note) 1. rated input/output frequency: 20 mhz 2. * :t rr measuring instrument bias application unit n-50bu 90% pulse generator (pg-10n) r s = 50 ? wave form analyzer (sas-8130) r i = 50 ? t p = 2 s t r = 0.35 ns = 0.05 i f = i r = 10 ma r l = 100 ? 10% input pulse output pulse i rr = 1 ma t r t p t rr v r i f t t a note) the part number in the parenthesis shows conventional part number.
ma3x100 2 skf00063aed i f ? v f i r ? v r c t ? v r 0 1.2 1.0 0.8 0.2 0.6 0.4 10 ? 3 10 ? 2 10 ? 1 1 10 2 10 10 3 ? 20 c 100 c t a = 150 c 25 c forward voltage v f ( v ) forward current i f ( ma ) 0 250 200 50 150 100 10 ? 4 10 ? 3 10 ? 2 10 ?1 10 1 10 2 10 3 t a = 150 c 100 c 25 c reverse voltage v r ( v ) reverse current i r ( na ) 0 200 50 150 100 0 2.0 1.5 0.5 1.0 reverse voltage v r ( v ) terminal capacitance c t ( pf )
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